RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, COMPOUND AND ACID DIFFUSION CONTROL AGENT

• Main Authors: NGUYEN KHANHTIN, FUJII TATSUYA
• Format: Patent
• Language: English; Japanese
• Published: 08.04.2024
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS

To provide a resist composition which achieves high sensitivity and has good lithography characteristics, a resist pattern formation method using the resist composition, a compound usable in production of the resist composition, and an acid diffusion control agent containing the compound.SOLUTION: A resist composition contains a resin component (A1) whose solubility in a developer changes by action of an acid, and a compound (D0) represented by general formula (d0). In the formula, Ar is an aromatic ring; Xd is an iodine atom, a fluorine atom, a bromine atom or a fluorinated alkyl group; Rd is a substituent; nd is an integer of 1 or more, as long as it is acceptable by an atomic value; md is an integer of 0 or more, as long as it is acceptable by an atomic value; Ld is a single bond or a divalent connection group; m is an integer of 1 or more; and Mm+ is an m-valent cation.SELECTED DRAWING: None 【課題】高感度化が図れ、且つリソグラフィー特性が良好なレジスト組成物、当該レジスト組成物を用いたレジストパターン形成方法、当該レジスト組成物の製造に利用可能な化合物、及び該化合物を含有する酸拡散制御剤の提供。【解決手段】酸の作用により現像液に対する溶解性が変化する樹脂成分（Ａ１）と、一般式（ｄ０）で表される化合物（Ｄ０）と、を含有する、レジスト組成物。式中、Ａｒは、芳香環であり；Ｘｄは、ヨウ素原子、フッ素原子、臭素原子又はフッ素化アルキル基であり；Ｒｄは、置換基であり；ｎｄは、原子価が許容する限り、１以上の整数であり、ｍｄは、原子価が許容する限り、０以上の整数であり；Ｌｄは、単結合又は２価の連結基であり；ｍは１以上の整数であって、Ｍｍ＋はｍ価のカチオンである。TIFF2024047908000086.tif44170【選択図】なし