SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

• Main Authors: HUNG HUNG, SUGIYAMA TORU, ONOMURA MASAAKI, YOSHIOKA AKIRA, ONO TETSUYA, KOBAYASHI HITOSHI, ISOBE YASUHIRO, SEKIGUCHI HIDEKI
• Format: Patent
• Language: English; Japanese
• Published: 03.04.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide semiconductor devices with excellent reliability.SOLUTION: A semiconductor device of the embodiment has a semiconductor layer, a first insulating film provided on the semiconductor layer, a first electrode film provided on the first insulating film, a second electrode film provided on the first electrode film, and a first field plate electrode provided on the second electrode film, and the lower end of the first field plate electrode is located on the second side of the first electrode film that is in contact with the second electrode film side than the first side that is in contact with the first insulating film.SELECTED DRAWING: Figure 1 【課題】信頼性に優れた半導体装置を提供する。【解決手段】実施形態の半導体装置は、半導体層と、半導体層上に設けられた第１絶縁膜と、第１絶縁膜上に設けられた第１電極膜と、第１電極膜上に設けられた第２電極膜と、第２電極膜上に設けられた第１フィールドプレート電極とを有し、第１フィールドプレート電極の下端は、第１電極膜の第１絶縁膜と接する第１面よりも第２電極膜側と接する第２面に位置している。【選択図】図１