SEMICONDUCTOR DEVICE

• Main Authors: HUNG HUNG, SUGIYAMA TORU, YOSHIOKA AKIRA, ONOMURA MASAAKI, ONO TETSUYA, KOBAYASHI HITOSHI, ISOBE YASUHIRO, SEKIGUCHI HIDEKI
• Format: Patent
• Language: English; Japanese
• Published: 03.04.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a semiconductor device including a nitride based semiconductor element applicable to bidirectional switches.SOLUTION: A semiconductor device according to an embodiment includes: a nitride semiconductor element including a conductive mounting bed, a semiconductor substrate formed on the mounting bed, a first nitride semiconductor layer, a second nitride semiconductor layer, a first major electrode, a second major electrode, a first gate electrode, and a second gate electrode; a first diode including a first anode electrode electrically connected to the mounting bed, and a first cathode electrode electrically connected to the first major electrode; and a second diode including a second anode electrode electrically connected to the mounting bed, and a second cathode electrode electrically connected to the second major electrode.SELECTED DRAWING: Figure 1 【課題】双方向スイッチに応用できる窒化物半導体素子を含む半導体装置を提供する。【解決手段】実施形態の半導体装置は、導電性のマウントベッドと、その上に形成された半導体基板と、第１窒化物半導体層と、第２窒化物半導体層と、第１主電極と、第２主電極と、第１ゲート電極と、第２ゲート電極と、を含む窒化物半導体素子と、前記マウントベッドに電気的に接続された第１アノード電極と、前記第１主電極に電気的に接続された第１カソード電極と、を含む第１ダイオードと、前記マウントベッドに電気的に接続された第２アノード電極と、前記第２主電極に電気的に接続された第２カソード電極と、を含む第２ダイオードと、を備える。【選択図】図１