METAL RESIDUE REMOVAL SOLUTION, METAL RESIDUE REMOVAL METHOD, AND METAL WIRING MANUFACTURING METHOD

• Main Authors: SUGAWARA MAI, WU YUGENG, RYZHII IVAN
• Format: Patent
• Language: English; Japanese
• Published: 29.03.2024
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CINEMATOGRAPHY; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; SEMICONDUCTOR DEVICES

To provide a metal residue removal solution that does not contain NMP, a method for removing metal residue using the metal residue removal solution, and a method for manufacturing a metal wiring.SOLUTION: A metal residue removal solution includes a mixed solvent (S0) containing a first organic solvent (S1) and a second organic solvent (S2), a salt (F) of a base containing no metal ions and hydrofluoric acid, and a water, and the first organic solvent (S1) is diethylformamide, and the mixed solvent (S0) is a mixed solvent in which the value obtained by subtracting the hydrogen bond term (δH) of the Hansen solubility parameter from the polar term (δP) of the Hansen solubility parameter is 0.6 or more.SELECTED DRAWING: None 【課題】ＮＭＰを含有しない金属残渣除去液、並びに前記金属残渣除去液を用いた金属残渣の除去方法、及び金属配線の製造方法の提供。【解決手段】第１の有機溶剤（Ｓ１）及び第２の有機溶剤（Ｓ２）を含む混合溶剤（Ｓ０）と、金属イオンを含まない塩基とフッ化水素酸との塩（Ｆ）と、水と、を含有し、前記第１の有機溶剤（Ｓ１）は、ジエチルホルムアミドであり、前記混合溶剤（Ｓ０）は、ハンセン溶解度パラメータの極性項（δＰ）からハンセン溶解度パラメータの水素結合項(δＨ)を減じた値が０．６以上となる混合溶剤である、金属残渣除去液。【選択図】なし