TARGET OBJECT PROCESSOR, METHOD FOR PROCESSING TARGET OBJECT, AND METHOD FOR MANUFACTURING ORIGINAL EDITION

• Main Authors: MOTOKAWA KOJI, SAKURAI NORIKO, SAKURAI HIDEAKI
• Format: Patent
• Language: English; Japanese
• Published: 29.03.2024
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

To reduce the roughness of the surface of a target object.SOLUTION: The method for processing a target object includes: a first step of conveying a target object into a processing room; a second step of generating at least one of first ions containing carbon and first plasma containing carbon and forming a film containing carbon on the target object by using at least one of the first ions and the first plasma; and a third step of generating second plasma from a second gas including at least one selected from oxygen, nitrogen, and rare gas and removing a film by reaction of the second plasma and the film. The second step and the third step are switched alternately seamlessly in the processing room.SELECTED DRAWING: Figure 1 【課題】対象物の表面のラフネスを低減する。【解決手段】対象物処理方法は、対象物を処理室に搬入する第１のステップと、炭素を含む第１のイオンおよび炭素を含む第１のプラズマの少なくとも一つを生成し、第１のイオンおよび第１のプラズマの少なくとも一つを用い、対象物の上に炭素を含む膜を形成する第２のステップと、酸素、窒素、および希ガスからなる群より選ばれる少なくとも一つを含む第２のガスから第２のプラズマを生成し、第２のプラズマと膜との反応により膜を除去する第３のステップと、を有し、処理室内において第２のステップと第３のステップをシームレスに交互に切り替える。【選択図】図１