SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

• Main Author: KATO TSUTOMU
• Format: Patent
• Language: English; Japanese
• Published: 28.03.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

SOLUTION: To provide a semiconductor device comprising a semiconductor substrate, a first electrode pad provided above the semiconductor substrate, a metal layer provided on the first electrode pad, an insulation layer provided above the first electrode pad, and an extension unit provided extending between the metal layer and the insulation layer and made of a resin, and also to provide a method for manufacturing a semiconductor device including the steps of: providing an electrode pad above a semiconductor substrate; providing an insulation layer above the electrode pad; providing a metal layer on an upper surface of the electrode pad; and providing an extension unit made of a resin between the insulation layer and the metal layer.SELECTED DRAWING: Figure 2 【解決手段】半導体基板と、前記半導体基板の上方に設けられた第１電極パッドと、前記第１電極パッド上に設けられた金属層と、前記第１電極パッドの上方に設けられた絶縁層と、前記金属層と前記絶縁層との間に延伸して設けられ、樹脂から成る延伸部と、を備える半導体装置を提供する。半導体基板の上方に電極パッドを設ける段階と、前記電極パッドの上方に絶縁層を設ける段階と、前記電極パッドの上面に金属層を設ける段階と、前記絶縁層と前記金属層との間に、樹脂から成る延伸部を設ける段階と、を備える半導体装置の製造方法を提供する。【選択図】図２