SEMICONDUCTOR DEVICE

• Main Authors: AKIMOTO KENGO, KUWABARA HIDEAKI, SASAKI TOSHINARI
• Format: Patent
• Language: English; Japanese
• Published: 15.03.2024
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING; ELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL ANALOGUE/DIGITAL CONVERTERS; OPTICAL LOGIC ELEMENTS; OPTICS; PHYSICS; SEMICONDUCTOR DEVICES; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF

To stabilize electric characteristics of a thin film transistor including an oxide semiconductor in an active layer by preventing changes in composition, film quality, interface, and the like of an oxide semiconductor region forming the active layer.SOLUTION: In a thin film transistor including a first oxide semiconductor region as an active layer, a second oxide semiconductor region with lower conductivity than that of the first oxide semiconductor is formed between the first oxide semiconductor region and a protective insulating layer of the thin film transistor. The second oxide semiconductor region thus functions as a protective layer for the first oxide semiconductor region. Therefore, the change in composition or the deterioration in film quality of the first oxide semiconductor region can be prevented and the electric characteristics of the thin film transistor can be stabilized.SELECTED DRAWING: Figure 1 【課題】酸化物半導体を活性層に用いた薄膜トランジスタにおいて、活性層を形成する酸化物半導体領域の組成や膜質や界面などの変化を防ぎ、薄膜トランジスタの電気的特性を安定させることを課題の一とする。【解決手段】第１の酸化物半導体領域を活性層として用いた薄膜トランジスタにおいて、第１の酸化物半導体領域と薄膜トランジスタの保護絶縁層との間に、第１の酸化物半導体より導電率が低い第２の酸化物半導体領域を形成することによって、第２の酸化物半導体領域は第１の酸化物半導体領域の保護層として機能するので、第１の酸化物半導体領域の組成の変化や膜質の劣化を防ぎ、薄膜トランジスタの電気的特性を安定させることができる。【選択図】図１