PHOTODETECTOR AND DISTANCE MEASURING DEVICE

• Main Authors: KUBOTA HIROSHI, SENGOKU MITSUHIRO, MATSUMOTO NOBU
• Format: Patent
• Language: English; Japanese
• Published: 14.03.2024
• Subjects: ANALOGOUS ARRANGEMENTS USING OTHER WAVES; BASIC ELECTRIC ELEMENTS; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION ORRERADIATION OF RADIO WAVES; MEASURING; PHYSICS; RADIO DIRECTION-FINDING; RADIO NAVIGATION; SEMICONDUCTOR DEVICES; TESTING

To reduce power consumption.SOLUTION: A photodetector of an embodiment comprises first to seventh semiconductor parts, and a semiconductor layer. The first semiconductor part and the second semiconductor part are of a first conductivity type and provided separate from each other. The semiconductor layer is of the first conductivity type or a second conductivity type and has a first surface and a second surface opposite to each other. The third semiconductor part is of the second conductivity type and provided between the first semiconductor part, second semiconductor part, and the semiconductor layer. The fourth semiconductor part of the first conductivity type and the fifth semiconductor part of the second conductivity type correspond to the first semiconductor part and are provided in contact with each other on a side of the first surface in the semiconductor layer. The sixth semiconductor part of the first conductivity type and the seventh semiconductor part of the second conductivity type correspond to the second semiconductor part and are provided in contact with each other on the side of the first surface in the semiconductor layer. The concentration of impurities in the third semiconductor part is higher than the concentration of impurities in the semiconductor layer.SELECTED DRAWING: Figure 8 【課題】消費電力を低減させる。【解決手段】一実施形態の光検出器は、第１乃至第７半導体部、及び半導体層を備える。第１半導体部及び第２半導体部は、第１導電型であり、互いに離れて設けられる。半導体層は、第１導電型又は第２導電型であり、対向する第１面及び第２面を有する。第３半導体部は、第２導電型であり、第１半導体部及び第２半導体部と半導体層との間に設けられる。第１導電型の第４半導体部及び第２導電型の第５半導体部は、第１半導体部に対応し、半導体層内の第１面側において互いに接するように設けられる。第１導電型の第６半導体部及び第２導電型の第７半導体部は、第２半導体部に対応し、半導体層内の第１面側において互いに接するように設けられる。第３半導体部の不純物濃度は、半導体層の不純物濃度より高い。【選択図】図８