SILICON ETCHING SOLUTION AND MANUFACTURING METHOD THEREOF, SUBSTRATE PROCESSING METHOD, AND SILICON DEVICE MANUFACTURING METHOD

To provide a new chemical solution that can wet-etch silicon at high speed when manufacturing a semiconductor device, etc.SOLUTION: A silicon etching liquid consists of an alkaline aqueous solution that contains hypohalite ions in the range of 0.05 to 5 mmol/L and has a pH of 12.5 or higher at 24°C....

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Bibliographic Details
Main Authors OKIMURA KOSHIRO, HITOMI TATSUYA, SEIKE YOSHIKI, NORO KOSUKE
Format Patent
LanguageEnglish
Japanese
Published 13.03.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:To provide a new chemical solution that can wet-etch silicon at high speed when manufacturing a semiconductor device, etc.SOLUTION: A silicon etching liquid consists of an alkaline aqueous solution that contains hypohalite ions in the range of 0.05 to 5 mmol/L and has a pH of 12.5 or higher at 24°C.SELECTED DRAWING: None 【課題】半導体デバイス等の製造時に、シリコンを高速でウェットエッチングすることのできる新しい薬液を提供する。【解決手段】次亜ハロゲン酸イオンを０．０５～５ｍｍｏｌ／Ｌの範囲で含み、２４℃でのｐＨが１２．５以上のアルカリ性水溶液からなる、シリコンエッチング液。【選択図】なし
Bibliography:Application Number: JP20230139142