SEMICONDUCTOR STORAGE DEVICE

• Main Authors: NODA KOTARO, AKITA TAKANORI, URAKAWA SEIICHI, OKAJIMA MUTSUMI
• Format: Patent
• Language: English; Japanese
• Published: 07.03.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To suppress a decrease in reliability of a semiconductor storage device.SOLUTION: A semiconductor storage device comprises: a first oxide semiconductor layer extending in a first direction; a second oxide semiconductor layer extending in the first direction and arranged adjacent to the first oxide semiconductor layer along a second direction crossing the first direction; a first wiring extending in a third direction crossing the first direction and overlapping the first oxide semiconductor layer in the third direction; a second wiring extending in the third direction and overlapping the second oxide semiconductor layer in the third direction; a first insulation film provided between the first wiring and the first oxide semiconductor layer; a second insulation film provided between the second wiring and the second oxide semiconductor layer; a first conductor provided on the first oxide semiconductor layer; a second conductor provided on the second oxide semiconductor layer; and an insulation layer including a gap between the first conductor and the second conductor or between the first wiring and the second wiring.SELECTED DRAWING: Figure 6 【課題】半導体記憶装置の信頼性の低下を抑制する【解決手段】半導体記憶装置は、第１方向に延在する第１の酸化物半導体層と、第１方向に延在し、第１方向と交差する第２方向に沿って第１の酸化物半導体層に隣り合って配置された第２の酸化物半導体層と、第１方向と交差する第３方向に延在し、第３方向において第１の酸化物半導体層に重なる第１の配線と、第３方向に延在し、第３方向において第２の酸化物半導体層に重なる第２の配線と、第１の配線と第１の酸化物半導体層との間に設けられた第１の絶縁膜と、第２の配線と第２の酸化物半導体層との間に設けられた第２の絶縁膜と、第１の酸化物半導体層の上に設けられた第１の導電体と、第２の酸化物半導体層の上に設けられた第２の導電体と、第１の導電体と第２の導電体との間、または、第１の配線と第２の配線との間に空隙を有する絶縁層と、を具備する。【選択図】図６