CONDUCTIVE MATERIAL AND PRODUCTION METHOD THEREOF

• Main Author: UEDA YUTARO
• Format: Patent
• Language: English; Japanese
• Published: 07.03.2024
• Subjects: APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CABLES; CHEMISTRY; CONDUCTORS; ELECTRICITY; ELECTROFORMING; ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; INSULATORS; METALLURGY; PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES

To provide a conductive material that can realize a sufficient low contact resistance under a low contact pressure (<2 N) while having a sufficient low dynamic friction coefficient and a sufficient heat resistance.SOLUTION: A conductive material comprises: a base material made of copper or a copper alloy; a ground layer composed of one or more layers comprising one or more metals selected from a group consisting of Ni, Co, and Fe; a Cu-Sn alloy layer; and a Sn layer in this order. A part of the Cu-Sn alloy layer is exposed on the Sn layer-side surface of the conductive material. On the Sn layer-side surface of the conductive material, in an area of 250 square μm including 50 area% or more of the Sn layer, an arithmetical average height is 0.03 μm or more when evaluated so that a cut-off value is 25 μm.SELECTED DRAWING: Figure 1A 【課題】十分に低い動摩擦係数および十分な耐熱性を有しつつ、低接触圧下（＜２Ｎ）での接触抵抗を十分に低くできる導電材料を提供する。【解決手段】銅又は銅合金からなる母材と、Ｎｉ、ＣｏおよびＦｅからなる群から選択されるいずれか１種以上から構成される１層以上である下地層と、Ｃｕ－Ｓｎ合金層と、Ｓｎ層と、をこの順に有する導電材料であって、前記導電材料のＳｎ層側表面において、前記Ｃｕ－Ｓｎ合金層の一部が露出しており、前記導電材料の前記Ｓｎ層側表面のうち、前記Ｓｎ層を５０面積％以上含む２５０μｍ角の領域において、カットオフ値を２５μｍとして評価した算術平均高さが０．０３μｍ以上である、導電材料。【選択図】図１Ａ