SILICON CARBIDE POWDER, METHOD FOR MANUFACTURING THE SAME AND METHOD FOR MANUFACTURING SILICON CARBIDE INGOT USING THE SAME

• Main Authors: PARK JONG HWI, KYUN MYUNG-OK
• Format: Patent
• Language: English; Japanese
• Published: 06.03.2024
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; COMPOUNDS THEREOF; CRYSTAL GROWTH; INORGANIC CHEMISTRY; METALLURGY; NON-METALLIC ELEMENTS; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

To provide a silicon carbide powder with improved purity and fewer defects, used to manufacture a silicon carbide ingot, a method of manufacturing the silicon carbide powder, and a method of manufacturing a silicon carbide wafer.SOLUTION: The present invention provides a silicon carbide powder that includes carbon and silicon, and includes an oxide film with a thickness of 0.1 nm to 10 nm, and methods that use the silicon carbide powder to manufacture a silicon carbide ingot and further manufacture a silicon carbide wafer from the ingot.SELECTED DRAWING: Figure 7 【課題】向上した純度を有し、欠陷の少ない炭化ケイ素インゴットを製造するために用いられる炭化ケイ素粉末、その製造方法、および炭化ケイ素ウエハの製造方法を提供する。【解決手段】炭素及びケイ素を含み、０．１ｎｍ～１０ｎｍの厚さを有する酸化膜を含む炭化ケイ素粉末、それを用いて炭化ケイ素インゴットを製造し、そのインゴットより炭化ケイ素ウェハを製造する方法を提供する。【選択図】図７