SPUTTERING APPARATUS AND FILM DEPOSITION METHOD

• Main Authors: HAYASAKA RYOICHIRO, NUMATA YUKINOBU, TAKEUCHI MASAHITO, FUJINAGA TETSUSHI, HANNA TAKU
• Format: Patent
• Language: English; Japanese
• Published: 01.03.2024
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

To provide a sputtering apparatus suitable for depositing a hexagonal crystal film having less crystal defects and excellent in crystal orientation by a sputtering method.SOLUTION: A sputtering apparatus includes a vacuum chamber 1 arranging a target 31 and a conveyance unit 7 for conveying a substrate Sg along the X axial direction so as to pass through a space above in the Z axial direction facing a sputtering surface 31a in the vacuum chamber. Control plates 6a and 6b having a width equal to or more than the length of the target in the Y axial direction, extended in the Z axial direction and standing before or after the target in the X axial direction can control the adhesion of sputtered particles having an angle formed with a film formation surface Sg1 and equal to or more than a predetermined value and obliquely incident to a substrate.SELECTED DRAWING: Figure 1 【課題】結晶欠陥の少なく、結晶配向性が良好な六方晶系の結晶膜をスパッタリング法により成膜することに適したスパッタリング装置を提供する。【解決手段】ターゲット３１が配置される真空チャンバ１を備え、真空チャンバ内でスパッタ面３１ａを臨むＺ軸方向上方の空間を通過するようにＸ軸方向に沿って基板Ｓｇを搬送する搬送ユニット７を備える。ターゲットのＸ軸方向前後に、当該ターゲットのＹ軸方向長さと同等以上の幅を持つと共にＺ軸方向に沿ってのびる規制板６ａ，６ｂを夫々立設し、成膜面Ｓｇ１とのなす角度が所定値以下となって斜入射するスパッタ粒子の基板への付着が規制板で規制されるように構成する。【選択図】図１