SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE PRODUCTION METHOD

• Main Author: YAMAZAKI SHUNPEI
• Format: Patent
• Language: English; Japanese
• Published: 21.02.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a semiconductor device which has in a lower portion a transistor employing a material other than an oxide semiconductor and has in an upper portion a transistor employing an oxide semiconductor.SOLUTION: A semiconductor device comprises: a first transistor 160 comprising first to fourth lines, a first gate electrode, a first source electrode and a first drain electrode; and a second transistor 162 having a second gate electrode, a second source electrode and a second drain electrode. The first transistor is provided on a substrate including a semiconductor material. The second transistor includes an oxide semiconductor layer. The first gate electrode and one of the second source electrode and the second drain electrode are electrically connected to each other. The first line and the first source electrode are electrically connected to each other. The second line and the first drain electrode are electrically connected to each other. The third line and the other of the second source electrode and the second drain electrode are electrically connected to each other. The fourth line and the second gate electrode are electrically connected to each other.SELECTED DRAWING: Figure 1 【課題】下部に酸化物半導体以外の材料を用いたトランジスタを有し、上部に酸化物半導体を用いたトランジスタを有する半導体装置を提供する。【解決手段】半導体装置は、第１の配線～第４の配線と、第１のゲート電極、第１のソース電極及び第１のドレイン電極を有する第１のトランジスタ１６０と、第２のゲート電極、第２のソース電極及び第２のドレイン電極を有する第２のトランジスタ１６２と、を有し、第１のトランジスタは半導体材料を含む基板に設けられ、第２のトランジスタは酸化物半導体層を含んで構成され、第１のゲート電極と第２のソース電極又は第２のドレイン電極の一方とは電気的に接続され、第１の配線と第１のソース電極とは電気的に接続され、第２の配線と第１のドレイン電極とは電気的に接続され、第３の配線と第２のソース電極又は第２のドレイン電極の他方とは電気的に接続され、第４の配線と第２のゲート電極とは電気的に接続される。【選択図】図１