DISPLAY DEVICE

To provide a liquid crystal display device with a high opening ratio, or provide a liquid crystal display device with high definition.SOLUTION: A display device includes a transistor, a liquid crystal element, and a first insulating layer. The transistor includes a semiconductor layer, a gate insula...

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Bibliographic Details
Main Authors KAWASHIMA SUSUMU, KUSUNOKI KOJI
Format Patent
LanguageEnglish
Japanese
Published 08.02.2024
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Summary:To provide a liquid crystal display device with a high opening ratio, or provide a liquid crystal display device with high definition.SOLUTION: A display device includes a transistor, a liquid crystal element, and a first insulating layer. The transistor includes a semiconductor layer, a gate insulating layer, a gate electrode, a first conductive layer, and a second conductive layer. The first insulating layer includes a first side surface existing on the first conductive layer. The semiconductor layer is in contact with an upper surface and a first side surface of the first conductive layer. The gate insulating layer faces the first side surface through the semiconductor layer. The gate electrode faces the first side surface through the semiconductor layer and the gate insulating layer. The second conductive layer exists on the first insulating layer and is in contact with the semiconductor layer. The liquid crystal element includes a second conductive layer, a third conductive layer, and a liquid crystal. The third conductive layer exists on the first insulating layer and overlaps with the second conductive layer in a plan view. The semiconductor layer includes an oxide semiconductor film and the second conductive layer includes an oxide conductive film.SELECTED DRAWING: Figure 1 【課題】開口率の高い液晶表示装置を提供する。高精細な液晶表示装置を提供する。【解決手段】表示装置は、トランジスタ、液晶素子、及び第1の絶縁層を有する。トランジスタは、半導体層、ゲート絶縁層、ゲート電極、第1の導電層、及び第2の導電層を有する。第1の絶縁層は第1の導電層上に位置する第1の側面を有する。半導体層は、第1の導電層の上面及び第1の側面に接し、ゲート絶縁層は半導体層を介して第1の側面と対向し、ゲート電極は半導体層及びゲート絶縁層を介して第1の側面と対向する。第2の導電層は第1の絶縁層上に位置し、且つ、半導体層に接する。液晶素子は第2の導電層と、第3の導電層と、液晶と、を有する。第3の導電層は第1の絶縁層上に位置し、且つ、平面視において第2の導電層と重なる。半導体層は酸化物半導体膜を含み、第2の導電層は酸化物導電膜を含む。【選択図】図1
Bibliography:Application Number: JP20230122723