MANUFACTURING METHOD OF LIGHT EMITTING ELEMENT
To provide a manufacturing method of a light emitting element including a light emitting functional portion made of a group III nitride semiconductor, and capable of forming a base layer with excellent transmittance and surface flatness on PSS.SOLUTION: A manufacturing method of a light emitting ele...
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Main Authors | , , , |
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Format | Patent |
Language | English Japanese |
Published |
08.02.2024
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Subjects | |
Online Access | Get full text |
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Summary: | To provide a manufacturing method of a light emitting element including a light emitting functional portion made of a group III nitride semiconductor, and capable of forming a base layer with excellent transmittance and surface flatness on PSS.SOLUTION: A manufacturing method of a light emitting element 1 according to the present invention includes the steps of forming a base layer 12 made of AlN on a PSS 10 via a buffer layer 11 made of AlN, and epitaxially growing a group III nitride semiconductor on the base layer 12 to form a light emitting function unit 13 including a light emitting layer 132, and in the step of forming the base layer 12, the base layer 12 is formed by epitaxially growing AlN using an MOVPE method with the V/III ratio of the source gas being in the range of 1.0 or more and 2.0 or less.SELECTED DRAWING: Figure 1
【課題】III族窒化物半導体からなる発光機能部を備えた発光素子の製造方法であって、透過率及び表面の平坦性に優れた下地層をPSS上に形成することのできる発光素子の製造方法を提供する。【解決手段】本発明の一態様として、PSS10上に、AlNからなるバッファ層11を介して、AlNからなる下地層12を形成する工程と、下地層12上に、III族窒化物半導体をエピタキシャル成長させて、発光層132を含む発光機能部13を形成する工程と、を含み、下地層12を形成する工程において、原料ガスのV/III比を1.0以上、2.0以下の範囲内として、MOVPE法によりAlNをエピタキシャル成長させて、下地層12を形成する、発光素子1の製造方法を提供する。【選択図】図1 |
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Bibliography: | Application Number: JP20220121448 |