OPTICAL SENSOR AND OPTICAL SENSOR ARRAY

To provide a graphene optical sensor which offers improved light absorption efficiency through plasmon resonance while exhibiting a good Seebeck effect.SOLUTION: An optical sensor is provided, comprising an insulation film provided on a substrate, a graphene light-receiving layer provided on the ins...

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Bibliographic Details
Main Author YAMASHITA HIROYASU
Format Patent
LanguageEnglish
Japanese
Published 08.02.2024
Subjects
BASIC ELECTRIC ELEMENTS
COLORIMETRY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT
MEASURING
PHYSICS
RADIATION PYROMETRY
SEMICONDUCTOR DEVICES
TESTING
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Summary:To provide a graphene optical sensor which offers improved light absorption efficiency through plasmon resonance while exhibiting a good Seebeck effect.SOLUTION: An optical sensor is provided, comprising an insulation film provided on a substrate, a graphene light-receiving layer provided on the insulation film and provided with a periodical structure at least in a portion thereof, a pair of electrodes connected to the light-receiving layer, and a gate electrode for applying a gate voltage to the light-receiving layer via the insulation film, the gate voltage being set in such a range that causes the Seebeck coefficient of the light-receiving layer to be 50 μV/K or greater and a light absorption efficiency to be 5% or greater.SELECTED DRAWING: Figure 5 【課題】プラズモン共鳴による光吸収効率の向上とゼーベック効果とを両立させたグラフェンの光センサを提供する。【解決手段】光センサは、基板上の絶縁膜と、前記絶縁膜の上に設けられて少なくとも一部に周期構造を有するグラフェンの受光層と、前記受光層に接続される一対の電極と、前記絶縁膜を介して前記受光層にゲート電圧を印加するゲート電極と、を有し、前記ゲート電圧は、前記受光層のゼーベック係数が５０μＶ／Ｋ以上、かつ、光吸収効率が５％以上となる範囲に設定されている。【選択図】図５
Bibliography:Application Number: JP20220121217