METALLIZATION METHOD

To provide a metallization method.SOLUTION: There is disclosed a metallization method, comprising (a) providing a photoresist layer on a first surface of a substrate, wherein the photoresist layer is formed from a photoresist composition comprising: a polymer comprising acid-labile groups; a photoac...

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Bibliographic Details
Main Authors HAGA MITSURU, JAMES F CAMERON, LIU CONG
Format Patent
LanguageEnglish
Japanese
Published 07.02.2024
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
CINEMATOGRAPHY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
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Summary:To provide a metallization method.SOLUTION: There is disclosed a metallization method, comprising (a) providing a photoresist layer on a first surface of a substrate, wherein the photoresist layer is formed from a photoresist composition comprising: a polymer comprising acid-labile groups; a photoacid generator; an organic phosphonic acid; and a solvent; (b) pattern-wise exposing the photoresist layer to activating radiation; (c) developing the exposed photoresist layer with a basic developer to form a photoresist pattern; and (d) after forming the photoresist pattern, plating a metal on the first surface of the substrate using the photoresist pattern as a plating mask.SELECTED DRAWING: Figure 1A 【課題】 メタライゼーション方法を提供する。【解決手段】 （ａ）基板の第１の表面上にフォトレジスト層を提供することであって、フォトレジスト層が、酸不安定基を含むポリマー；光酸発生剤；有機ホスホン酸；及び溶媒を含むフォトレジスト組成物から形成される、基板の第１の表面上にフォトレジスト層を提供することと、（ｂ）フォトレジスト層を活性化放射線にパターン様露光することと、（ｃ）露光されたフォトレジスト層を塩基性現像液で現像してフォトレジストパターンを形成することと、（ｄ）フォトレジストパターンを形成した後、フォトレジストパターンをめっき用マスクとして使用して、基板の第１の表面に金属をめっきすることと、を含む、メタライゼーション方法が本明細書に開示される。【選択図】 図１Ａ
Bibliography:Application Number: JP20230119216