METHOD OF MANUFACTURING BONDED LIGHT-EMITTING ELEMENT WAFER

• Main Authors: FURUYA SHOGO, AKIYAMA TOMOHIRO, ISHIZAKI JUNYA
• Format: Patent
• Language: English; Japanese
• Published: 06.02.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a method of manufacturing a bonded light-emitting element wafer, reducing a stress at an interface with a light-emitting element structure that is fixed with a thermosetting bonding material and thereby suppressing the occurrence of peeling and cracks of the light-emitting element structure after a starting substrate has been removed.SOLUTION: In a method of manufacturing a bonded light-emitting element wafer, a light-emitting element structure having, as an active layer, (AlyGa1-y)xIn1-xP (0.4≤x≤0.6, 0≤y≤0.5), and a substrate that is transparent with respect to visible light and that is transparent with respect to ultraviolet light are bonded or adhered via a thermosetting bonding material that is transparent with respect to visible light and that absorbs ultraviolet light. In the method, the curing temperature of the thermosetting bonding material is increased by a step-by-step increase having three or more steps in a range of 120°C or more and 320°C or less, by a gradual increase, or by a combination thereof to cure the thermosetting bonding material.SELECTED DRAWING: Figure 1 【課題】 熱硬化型接合材で固定される発光素子構造との界面における応力を減少させ、出発基板除去後の発光素子構造の剥離やクラック発生を抑制した接合型発光素子ウェーハの製造方法を提供する。【解決手段】 （ＡｌｙＧａ１－ｙ）ｘＩｎ１－ｘＰ（０．４≦ｘ≦０．６，０≦ｙ≦０．５）を活性層として有する発光素子構造と、可視光に対して透明かつ紫外光に対して透明な基板とを、可視光に対して透明かつ紫外光を吸収する熱硬化型接合材を介して接合又は接着する接合型発光素子ウェーハの製造方法において、前記熱硬化型接合材の硬化温度を、１２０℃以上３２０℃以下の範囲で３段階以上の段階を有する段階的増加により、若しくは、漸次的増加により、又は、それらの組合せにより、上昇させて前記熱硬化型接合材を硬化する接合型発光素子ウェーハの製造方法。【選択図】図１