SEMICONDUCTOR LASER

To provide a semiconductor laser with excellent characteristics.SOLUTION: A semiconductor laser includes: an active layer; a diffraction grating layer that has a phase shift part whose diffraction grating period is partially different; a contact layer arranged on an upper part of the diffraction gra...

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Bibliographic Details
Main Author NAKAMURA ATSUSHI
Format Patent
LanguageEnglish
Japanese
Published 25.01.2024
Subjects
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRICITY
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Summary:To provide a semiconductor laser with excellent characteristics.SOLUTION: A semiconductor laser includes: an active layer; a diffraction grating layer that has a phase shift part whose diffraction grating period is partially different; a contact layer arranged on an upper part of the diffraction grating layer; a high resistor having a higher electric resistance than the contact layer; and an electrode in contact with the contact layer. The high resistor is arranged under at least a part of a portion overlapped with the phase shift part, of the electrode.SELECTED DRAWING: Figure 2 【課題】特性に優れた半導体レーザを提供すること【解決手段】半導体レーザであって、活性層と、回折格子周期が部分的に異なる位相シフト部を有する回折格子層と、前記回折格子層の上部に配置されたコンタクト層と、前記コンタクト層より電気抵抗の高い高抵抗体と、前記コンタクト層と接する電極と、を含み、前記高抵抗体は、前記電極のうち前記位相シフト部と重畳する部分の少なくとも一部の下に配置される。【選択図】 図２
Bibliography:Application Number: JP20220146157