PLASMA PROCESSING METHOD AND PLASMA PROCESSING SYSTEM

To provide a technology for suppressing particles within a chamber.SOLUTION: A plasma processing method is provided that is performed in a plasma processing device having a chamber. This method includes a step (a) of forming a carbon-containing film on the outer peripheral edge of a substrate, and a...

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Bibliographic Details
Main Authors ORUI TAKATOSHI, TAKAHASHI ATSUSHI, SUDA RYUTARO
Format Patent
LanguageEnglish
Japanese
Published 25.01.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:To provide a technology for suppressing particles within a chamber.SOLUTION: A plasma processing method is provided that is performed in a plasma processing device having a chamber. This method includes a step (a) of forming a carbon-containing film on the outer peripheral edge of a substrate, and a step (b) of supplying processing gas into the chamber, and etching the substrate disposed on a substrate support portion in the chamber by the plasma generated from the processing gas, in which the substrate includes an etching film and a mask film on the etching film, the step (b) being performed after the step (a). In the step (b), particles generated in the chamber are deposited on a carbon-containing film at the outer peripheral edge of the substrate.SELECTED DRAWING: Figure 2 【課題】チャンバ内のパーティクルを抑制する技術を提供する。【解決手段】チャンバを有するプラズマ処理装置において実行されるプラズマ処理方法が提供される。この方法は（ａ）基板の外周端部に炭素含有膜を形成する工程と、（ｂ）（ａ）の後に、チャンバ内に処理ガスを供給し、処理ガスから生成したプラズマにより、チャンバ内の基板支持部上に配置された基板をエッチングする工程であって、基板はエッチング膜とエッチング膜上のマスク膜とを含む工程と、を備える。（ｂ）において、チャンバ内で生成された粒子が基板の外周端部の炭素含有膜上に堆積させる。【選択図】図２
Bibliography:Application Number: JP20220112306