METHOD FOR GROWING CRYSTAL

• Main Author: LIN CHING-SHAN
• Format: Patent
• Language: English; Japanese
• Published: 19.01.2024
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

To provide a method for growing a crystal, capable of substantially reducing formation time of a crystal having a high single crystal ratio and a large size.SOLUTION: A method for growing a crystal includes the steps of: providing a first seed crystal having a first single crystal ratio and a first size; and performing crystal growth processes N times to the first seed crystal. Each crystal growth process comprises: performing crystal growth processes N times including the crystal growth processes more than 3 times until increasing a single crystal ratio to achieve a second crystal having a single crystal ratio of 100%; and controlling a ratio difference (ΔTz/ΔTx) between an axis direction temperature gradient (ΔTz) of a crystal and a diameter direction temperature gradient (ΔTx) within 0.5-3 to form the second crystal.SELECTED DRAWING: Figure 4 【課題】高い単結晶比率および大きなサイズを有する結晶の形成時間を大幅に短縮することのできる結晶の結晶成長方法を提供する。【解決手段】結晶の成長方法は、以下のステップを含む。第１種結晶を提供し、第１種結晶は、第１単結晶比率および第１サイズを有する。第１種結晶に対してＮ回の結晶成長プロセスを実行し、各結晶成長プロセスは、単結晶比率を増やし、かつ１００％の単結晶比率を有する第２結晶が達成されるまでＮ回の結晶成長プロセスを実行し、Ｎ回は、３回より多い結晶成長プロセスを含む。各結晶成長プロセスは、結晶の軸時方向温度勾配（ΔＴｚ）と径方向温度勾配（ΔＴｘ）の間の比差（ΔＴｚ／ΔＴｘ）を調整することにより、その比差を０．５～３の範囲に制御して、第２結晶を形成することを含む。【選択図】図４