METHOD FOR PRODUCING MASK BLANK, AND MASK BLANK, AND PHOTOMASK

To optimize the cross-sectional shape and suppress side etching in a mask blank.SOLUTION: A mask blank 10A includes a layer serving as a phase shift mask. The mask blank includes a mask layer 12 that is laminated on a transparent substrate 11, has phase-shift capabilities and contains chromium. The...

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Main Authors SEKINE MASAHIRO, MOCHIZUKI SEI, SHIOZAKI EIJI, AZUMA SAYURI, YAMADA SHINGO, MORIYAMA KUMIKO
Format Patent
LanguageEnglish
Japanese
Published 17.01.2024
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
CINEMATOGRAPHY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
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Summary:To optimize the cross-sectional shape and suppress side etching in a mask blank.SOLUTION: A mask blank 10A includes a layer serving as a phase shift mask. The mask blank includes a mask layer 12 that is laminated on a transparent substrate 11, has phase-shift capabilities and contains chromium. The mask layer contains oxygen and nitrogen. On a surface 12A of the mask layer that is remote from the transparent substrate, the compositional ratio of oxygen to nitrogen, O/N, is 20 or more.SELECTED DRAWING: Figure 1 【課題】断面形状の適正化とサイドエッチングの抑制を図る。【解決手段】位相シフトマスクとなる層を有するマスクブランクス１０Ａであって、透明基板１１に積層された位相シフト能を有しクロムを含有するマスク層１２を有し、マスク層が酸素および窒素を含有するとともに、マスク層の前記透明基板から離間する側の表面１２Ａにおいて窒素に対する酸素の組成比Ｏ／Ｎが、２０以上とされる。【選択図】図１
Bibliography:Application Number: JP20220106960