SUBSTRATE PROCESSING DEVICE

• Main Authors: SHUDO EIICHIRO, HIGUCHI TOMOMI, OKUNO YASUTOSHI, INABA MAKI
• Format: Patent
• Language: English; Japanese
• Published: 17.01.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To ensure that a process liquid bouncing back from substrate periphery does not adhere to the substrate during processing by the process liquid.SOLUTION: A substrate processing device 2 comprises: a support part 32 to which a substrate 9 is attached, with the substrate 9 being in a first support state of being supported horizontally, and that supports an attachment member 81 that expands to the surrounding of the substrate 9; a lifting part 33 that is located in proximity to the periphery of the substrate 9 in the first support state, and that, with a region of the attachment member 81 taken as a substrate periphery part, lifts the substrate 9 relatively to the substrate periphery part while deforming the attachment member 81 in the surrounding of the substrate 9, thereby forming a second support state where the relative position of the substrate 9 to the substrate periphery part is higher than in the first support state; and a process liquid supply part 42 that supplies a process liquid to the top surface of the substrate 9 in the second support state so as to process the top surface. Thus, it is possible to ensure that a process liquid bouncing back from the substrate periphery part does not adhere to the substrate 9 during processing by the process liquid.SELECTED DRAWING: Figure 4 【課題】処理液による処理時に、基板周辺部から跳ね返る処理液が基板に付着することを抑制する。【解決手段】基板処理装置２は、基板９が水平状態で支持される第１支持状態において、基板９が取り付けられるとともに基板９の周囲に広がる取付部材８１を支持する支持部３２と、第１支持状態において、基板９の周辺に近接して配置される、取付部材８１の部位を基板周辺部として、基板９の周囲にて取付部材８１を変形しつつ基板９を基板周辺部に対して相対的に上昇させることにより、基板周辺部に対する基板９の相対位置が第１支持状態よりも上方となる第２支持状態を形成する昇降部３３と、第２支持状態において基板９の上面に処理液を供給して、上面を処理する処理液供給部４２とを備える。これにより、処理液による処理時に、基板周辺部から跳ね返る処理液が基板９に付着することを抑制することができる。【選択図】図４