ELECTRONIC DEVICE

• Main Author: OSHIMA MASANORI
• Format: Patent
• Language: English; Japanese
• Published: 17.01.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide an electronic device with a metal member having a roughened region covered with sealing resin capable of ensuring close contact between the metal member and the sealing resin, while reducing warpage and the area of the roughened region.SOLUTION: Around an area 3C of a lead frame 3, where a semiconductor element 2 is mounted, a frame-shaped roughened region 3A is formed surrounding the semiconductor element 2. The roughened region 3A has a width of at least 0.5 mm and is composed of fine irregularities on the order of nanometers. In the roughened region 3A, the average height of the fine irregularities is 30 nm or more. A predetermined area of the surface of the lead frame 3 on which the semiconductor element 2 is mounted and which extends from the end of the portion covered with the sealing resin is a non-roughened region 3B that has not been subjected to roughening treatment.SELECTED DRAWING: Figure 4 【課題】金属部材の粗化領域が封止樹脂に覆われた電子装置において、粗化領域の面積を減らしつつ、金属部材と封止樹脂との密着確保および反り低減を両立させる。【解決手段】リードフレーム３のうち半導体素子２が搭載される領域３Ｃの周囲には、半導体素子２を囲む枠体状の粗化領域３Ａが形成されている。粗化領域３Ａは、幅が少なくとも０．５ｍｍ以上であり、ナノメートルオーダーの微細凹凸で構成されている。粗化領域３Ａは、微細凹凸の凹凸高さの平均が３０ｎｍ以上である。リードフレーム３のうち半導体素子２が搭載される表面であって、封止樹脂に覆われる部分の端部から所定範囲の領域は、粗化処理がされていない非粗化領域３Ｂである。【選択図】図４