METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING ELEMENT

• Main Authors: INAZU TETSUHIKO, NIWA NORITAKA
• Format: Patent
• Language: English; Japanese
• Published: 11.01.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To improve the performance of a semiconductor light emitting element.SOLUTION: A method for manufacturing a semiconductor light emitting element 10 comprises the steps of: forming an active layer 26 of an AlGaN-based semiconductor material on an n-type semiconductor layer 24 comprising an n-type AlGaN-based semiconductor material; forming a p-type semiconductor layer 28 on the active layer 26; removing a portion of the p-type semiconductor layer 28 and the active layer 26 by dry etching so that the top surface 34 of the n-type semiconductor layer 24 is exposed; plasma treating the top surface 34 of the n-type semiconductor layer 24 in an atmosphere containing N2 gas and NH3 gas; and forming an n-side contact electrode 30 on the plasma treated top surface 34 of the n-type semiconductor layer 24.SELECTED DRAWING: Figure 1 【課題】半導体発光素子の性能を向上させる。【解決手段】半導体発光素子１０の製造方法は、ｎ型ＡｌＧａＮ系半導体材料から構成されるｎ型半導体層２４上にＡｌＧａＮ系半導体材料の活性層２６を形成する工程と、活性層２６上にｐ型半導体層２８を形成する工程と、ｎ型半導体層２４の上面３４が露出するように、ｐ型半導体層２８および活性層２６の一部をドライエッチングにより除去する工程と、Ｎ２ガスとＮＨ３ガスを含む雰囲気中において、ｎ型半導体層２４の上面３４をプラズマ処理する工程と、プラズマ処理されたｎ型半導体層２４の上面３４にｎ側コンタクト電極３０を形成する工程と、を備える。【選択図】図１