MANUFACTURING METHOD OF III NITRIDE SEMICONDUCTOR

• Main Author: OZAKI MASAYOSHI
• Format: Patent
• Language: English; Japanese
• Published: 11.01.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To suppress variations in Si concentration of a III nitride semiconductor.SOLUTION: In a preparation step S1, first, a dummy substrate 3 is installed in a recess 2 of a susceptor 1. The susceptor 1 used is one in which a SiC film 4 is formed on the surface of the susceptor 1 made of carbon. Next, the susceptor 1 is heated to a temperature of 1100°C or higher, and an Al raw material is introduced onto the susceptor 1. Due to the introduction of the Al raw material, a film 5 containing Al is formed on the SiC film 4 of the susceptor 1 and on the dummy substrate 3. Next, the temperature of the susceptor 1 is lowered to room temperature, and the dummy substrate 3 is taken out from the recess 2 of the susceptor 1. A growth step S2 is a step performed after the preparation step S1. In the growth step S2, a substrate 7 is placed in the recess 2 of the susceptor 1, and a semiconductor layer 8 made of a III nitride semiconductor is formed on the substrate 7 by MOCVD.SELECTED DRAWING: Figure 1 【課題】ＩＩＩ族窒化物半導体のＳｉ濃度のばらつきを抑制すること。【解決手段】準備工程Ｓ１では、まず、サセプタ１の凹部２にダミー基板３を設置する。サセプタ１は、カーボンからなるサセプタ１の表面にＳｉＣ膜４が形成されているものを用いる。次に、サセプタ１を１１００℃以上の温度に加熱し、サセプタ１上にＡｌ原料を導入する。Ａｌ原料の導入により、サセプタ１のＳｉＣ膜４上、およびダミー基板３上には、Ａｌを含む膜５が形成される。次に、サセプタ１を室温まで降温し、ダミー基板３をサセプタ１の凹部２から取り出す。成長工程Ｓ２は、準備工程Ｓ１の後に行う工程である。成長工程Ｓ２では、サセプタ１の凹部２に基板７を設置し、ＭＯＣＶＤ法によって基板７上にＩＩＩ族窒化物半導体からなる半導体層８を形成する。【選択図】図１