MASK BLANK SUBSTRATE, AND MANUFACTURING METHOD OF THE SAME
SOLUTION: To provide a mask blank substrate which has two main surfaces of first and second main surfaces of 152 mm×152 mm square, and a thickness of 6.35 mm, and in which when a range of 132 mm×132 mm square centering on an intersection point of diagonal lines is a calculation region in each of the...
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Main Authors | , , , , |
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Format | Patent |
Language | English Japanese |
Published |
11.01.2024
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Subjects | |
Online Access | Get full text |
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Summary: | SOLUTION: To provide a mask blank substrate which has two main surfaces of first and second main surfaces of 152 mm×152 mm square, and a thickness of 6.35 mm, and in which when a range of 132 mm×132 mm square centering on an intersection point of diagonal lines is a calculation region in each of the first and second main surfaces, a flatness on the basis of a least squares plane of a substrate surface in the calculation region on the substrate surface in at least one of the calculation regions of the first and second main surfaces is 100 nm or less, and a difference (PV) between a maximum value and a minimum value of a height of a calculation surface on the basis of the least squares plane, represented by a difference between a shape of the substrate surface before smoothing process by Gaussian filter (10 mm×10 mm) and a shape after the smoothing process is 20 nm or less.EFFECT: A mask blank substrate can provide an exposure mask in which a main surface of a substrate has a highly flat shape when the wave front of the exposure mask is corrected by an exposure device in exposure using the exposure mask, especially in exposure by EUVL.SELECTED DRAWING: None
【解決手段】152mm×152mm角の第一及び第二主表面の2つの主表面を有し、厚さが6.35mmであり、第一及び第二主表面の各々において、対角線の交点を中心とする132mm×132mm角の範囲を算出領域としたとき、第一及び第二主表面の少なくとも一方の算出領域の基板表面において、算出領域の基板表面の最小二乗平面を基準とした平坦度が100nm以下であり、かつガウシアンフィルタ(10mm×10mm)による平滑化処理の前の基板表面の形状と、平滑化処理の後の形状との差分で表される算出面の、最小二乗平面を基準とした、高さの最高値と最低値との差(PV)が20nm以下であるマスクブランクス用基板。【効果】露光用マスクを用いた露光、特に、EUVLによる露光において、露光用マスクを露光装置で波面補正したとき、基板の主表面が、高平坦な形状となる露光用マスクを与えることができる。【選択図】なし |
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Bibliography: | Application Number: JP20220101038 |