ETCHING METHOD AND PLASMA PROCESSING APPARATUS
To provide an etching method and a plasma processing apparatus capable of forming a metal-containing deposit having a desired shape or a desired characteristic on a mask.SOLUTION: An etching method includes the steps of: (a) providing a substrate having an etching object film and a mask on the etchi...
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Main Author | |
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Format | Patent |
Language | English Japanese |
Published |
10.01.2024
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Subjects | |
Online Access | Get full text |
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Summary: | To provide an etching method and a plasma processing apparatus capable of forming a metal-containing deposit having a desired shape or a desired characteristic on a mask.SOLUTION: An etching method includes the steps of: (a) providing a substrate having an etching object film and a mask on the etching object film; (b) after (a), forming a metal-containing deposit on the mask by first plasma generated from first processing gas containing metal-containing gas and hydrogen-containing gas; (c) after (b), deforming or modifying the metal-containing deposit by a second plasma generated from a second processing gas different from the first processing gas; and (d) after (c), etching the etching object film.SELECTED DRAWING: Figure 3
【課題】マスク上に所望の形状又は所望の特性を有する金属含有堆積物を形成できるエッチング方法及びプラズマ処理装置を提供する。【解決手段】エッチング方法は、(a)エッチング対象膜とエッチング対象膜上のマスクとを有する基板を提供する工程と、(b)(a)の後、金属含有ガスと水素含有ガスとを含む第1処理ガスから生成される第1プラズマにより、マスク上に金属含有堆積物を形成する工程と、(c)(b)の後、第1処理ガスとは異なる第2処理ガスから生成される第2プラズマにより、金属含有堆積物を変形又は改質する工程と、(d)(c)の後、エッチング対象膜をエッチングする工程と、を含む。【選択図】図3 |
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Bibliography: | Application Number: JP20220100139 |