POLYMER, RESIST COMPOSITION, METHOD FOR MANUFACTURING PATTERNED SUBSTRATE, AS WELL AS, (METH)ACRYLIC ACID ESTER AND MANUFACTURING METHOD THEREOF
To provide a polymer excellent in developer dissolubility, a resist composition containing the polymer, and a method for manufacturing a substrate on which a pattern is formed with the resist composition.SOLUTION: A polymer containing a structural unit (1) based on a monomer represented by formula (...
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Main Authors | , , , , |
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Format | Patent |
Language | English Japanese |
Published |
09.01.2024
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Subjects | |
Online Access | Get full text |
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Summary: | To provide a polymer excellent in developer dissolubility, a resist composition containing the polymer, and a method for manufacturing a substrate on which a pattern is formed with the resist composition.SOLUTION: A polymer containing a structural unit (1) based on a monomer represented by formula (1) and having a content of 35 mol% or less of a structural unit based on a monomer having a polycyclic structure. In formula (1), R1 represents a hydrogen atom or a methyl group; A1 represents a linking group containing an ester bond or a single bond, provided that A1 does not have a tertiary carbon atom; Z1 represents an atomic group that forms a sulfur-containing cyclic hydrocarbon group having 3 to 6 carbon atoms, including the carbon atom bonded with A1 and -SO2-.SELECTED DRAWING: None
【課題】現像液溶解性に優れる重合体、前記重合体を含むレジスト組成物、および前記レジスト組成物を用いたパターンが形成された基板の製造方法を提供すること。【解決手段】式(1)で表される単量体に基づく構成単位(1)を含み、多環構造を有する単量体に基づく構成単位の含有量が35モル%以下である、重合体。式(1)中、R1は水素原子又はメチル基を表す;A1はエステル結合を含む連結基又は単結合を表す、ただし、A1は第3級炭素原子を有さない;Z1は、A1と結合している炭素原子と-SO2-とを含めて炭素数3~6の含硫黄環式炭化水素基を形成する原子団を表す。TIFF2024001025000017.tif50170【選択図】なし |
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Bibliography: | Application Number: JP20230148444 |