WAFER PROCESSING METHOD

• Main Authors: HARADA SHIGENORI, MORI TOMOKA, OKAMURA TAKU
• Format: Patent
• Language: English; Japanese
• Published: 28.12.2023
• Subjects: BASIC ELECTRIC ELEMENTS; DRESSING OR CONDITIONING OF ABRADING SURFACES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS; GRINDING; MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; PERFORMING OPERATIONS; POLISHING; SEMICONDUCTOR DEVICES; TRANSPORTING

To provide a wafer processing method that can cut out a wafer with a small diameter including a characteristic part of a wafer with a large diameter.SOLUTION: A wafer processing method, which cuts out a wafer with a small diameter from a wafer with a large diameter, comprises: a holding step 1003 of holding the wafer with a larger diameter on a holding table so that a distance between a point of intersection between a characteristic part of the wafer with a large diameter and an outer edge in a circular arc-shape and a rotation center of the holding table is equal to a radius of the wafer with a small diameter; a positioning step 1004 of positioning a cutting blade at a position away by a distance corresponding to the radius of the wafer with a small diameter from the rotation center; and a cutting-out step 1005 of cutting out the wafer with a small diameter whose outer periphery includes the characteristic part by rotating the holding table, in a state where the cutting blade is cut into the wafer with a large diameter.SELECTED DRAWING: Figure 3 【課題】大径ウエーハの特徴部分を含んだ小径ウエーハを切り出すことができるウエーハの加工方法を提供すること。【解決手段】ウエーハの加工方法は、大径ウエーハから小径ウエーハを切り出すウエーハの加工方法であって、大径ウエーハの特徴部分と円弧状の外縁との交点と保持テーブルの回転中心との距離が小径ウエーハの半径に相当するように大径ウエーハを保持テーブルに保持する保持ステップ１００３と、回転中心から小径ウエーハの半径分離れた位置に切削ブレードを位置付ける位置付けステップ１００４と、切削ブレードを大径ウエーハに切り込んだ状態で、保持テーブルを回転させて外周に特徴部分を含んだ該小径ウエーハを切り出す切り出しステップ１００５と、を備える。【選択図】図３