SEMICONDUCTOR STORAGE DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR STORAGE DEVICE

To provide a semiconductor storage device having high performance.SOLUTION: A semiconductor storage device 10 includes a tunnel insulation film 53, a charge capture film 54 deposed on the tunnel insulation film 53, and a conductor layer 40 deposed on the charge capture film 54 through block insulati...

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Bibliographic Details
Main Authors ARIGA TOMOTAKA, KITAYAMA DAIKI, IKENO DAISUKE, KAJITA AKIHIRO, IKEDA MITSUO
Format Patent
LanguageEnglish
Japanese
Published 27.12.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:To provide a semiconductor storage device having high performance.SOLUTION: A semiconductor storage device 10 includes a tunnel insulation film 53, a charge capture film 54 deposed on the tunnel insulation film 53, and a conductor layer 40 deposed on the charge capture film 54 through block insulation films 55, 56. The conductor layer 40 includes a first layer 41 containing molybdenum, and a second layer 42 being a layer deposed at a position opposite from the block insulation films 55, 56 across the first layer 41 and containing tungsten.SELECTED DRAWING: Figure 13 【課題】性能の高い半導体記憶装置を提供する。【解決手段】半導体記憶装置１０は、トンネル絶縁膜５３と、トンネル絶縁膜５３の上に設けられた電荷捕獲膜５４と、電荷捕獲膜５４の上にブロック絶縁膜５５，５６を介して設けられた導電体層４０と、を備える。導電体層４０は、モリブデンを含む第１層４１と、第１層４１を挟んでブロック絶縁膜５５，５６とは反対側となる位置に設けられた層であって、タングステンを含む第２層４２と、を含む。【選択図】図１３
Bibliography:Application Number: JP20220096444