SUBSTRATE FOR SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
To provide a substrate for a semiconductor device that can further reduce the size of the semiconductor device and increase the formation density of the semiconductor device.SOLUTION: A semiconductor device substrate includes a plurality of metal portions 11 serving as a semiconductor element mounti...
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Main Authors | , |
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Format | Patent |
Language | English Japanese |
Published |
21.12.2023
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Subjects | |
Online Access | Get full text |
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Summary: | To provide a substrate for a semiconductor device that can further reduce the size of the semiconductor device and increase the formation density of the semiconductor device.SOLUTION: A semiconductor device substrate includes a plurality of metal portions 11 serving as a semiconductor element mounting portions 11a and/or electrode portions 11b on a mother board 10. A projecting portion is formed on the metal portion 11. The projection portion is formed to overhang from the metal portion 11 in a direction perpendicular to the axial direction of the metal portion 11. The area of the upper surface of the metal portion 11 including the projection portion is formed to be larger than the area of the back surface of the metal portion 11 that is in contact with the front surface of the mother board 10. In each of the metal portions 11, the projection amount of the projecting portion on the side facing the adjacent metal portion 11 is formed to be larger than the projection amount of the projecting portion at a position other than the side facing the adjacent metal portion 11.SELECTED DRAWING: Figure 10
【課題】半導体装置の一層の小型化が図れるとともに、半導体装置としての形成密度を高めることができる半導体装置用基板を提供する。【解決手段】母型基板10上に半導体素子搭載部11a及び/又は電極部11bとなる金属部11を複数備える半導体装置用基板である。金属部11には張出部が形成されている。張出部は、金属部11の軸方向と直交する方向に金属部11から張出し形成されている。張出部を含めた金属部11の上面の面積は、母型基板10の表面と接する金属部11の裏面の面積より大きく形成されている。各金属部11において、隣接する金属部11と対向する側における張出部の張出し量は、隣接する金属部11と対向する側を除く位置における張出部の張出し量より大きく形成されている。【選択図】図10 |
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Bibliography: | Application Number: JP20230186256 |