STACKED SEMICONDUCTOR PACKAGE AND METHOD FOR MANUFACTURING THE SAME
To provide a stacked semiconductor package that can be made thinner.SOLUTION: A stacked semiconductor package has a first substrate, a three-dimensional device stacked in a first direction with respect to the first substrate, and a first connecting member connecting the first substrate and the three...
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Main Author | |
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Format | Patent |
Language | English Japanese |
Published |
14.12.2023
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Subjects | |
Online Access | Get full text |
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Summary: | To provide a stacked semiconductor package that can be made thinner.SOLUTION: A stacked semiconductor package has a first substrate, a three-dimensional device stacked in a first direction with respect to the first substrate, and a first connecting member connecting the first substrate and the three-dimensional device, the three-dimensional device has a plurality of components including semiconductor integrated circuit components and passive components stacked in the first direction, a first major surface of the first substrate facing the three-dimensional device and a first major surface of the three-dimensional device facing the first substrate are connected via the first connecting member in a separated state, and a first major surface of the semiconductor integrated circuit component facing the passive component and a first major surface of the passive component facing the semiconductor integrated circuit component each include a flat surface, and the flat surface of the semiconductor integrated circuit component and the flat surface of the passive component are joined, in contact.SELECTED DRAWING: Figure 1
【課題】薄型化を図ることができる積層型半導体パッケージを提供する。【解決手段】積層型半導体パッケージは、第1基板と、前記第1基板に対して第1方向に積層される三次元デバイスと、前記第1基板と前記三次元デバイスとを接続する第1接続部材とを備え、前記三次元デバイスは、前記第1方向に積層された半導体集積回路部品と受動部品とを含む複数の部品を有し、前記第1基板の前記三次元デバイスに対向する第1主面と、前記三次元デバイスの前記第1基板に対向する第1主面とは、離隔した状態で、前記第1接続部材を介して接続され、前記半導体集積回路部品の前記受動部品に対向する第1主面と、前記受動部品の前記半導体集積回路部品に対向する第1主面とは、それぞれ、平坦面を含み、前記半導体集積回路部品の前記平坦面と前記受動部品の前記平坦面とは、接触した状態で、接合されている。【選択図】図1 |
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Bibliography: | Application Number: JP20220090321 |