NONVOLATILE MEMORY CELL AND NONVOLATILE SEMICONDUCTOR STORAGE DEVICE

To provide a nonvolatile memory cell and a nonvolatile semiconductor storage device which can be integrated and minimized.SOLUTION: In a nonvolatile semiconductor storage device, a three-dimensional structure for a memory cell C in which a memory transistor MT, a drain side selection transistor DT a...

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Bibliographic Details
Main Authors TANIGUCHI YASUHIRO, SHIRATA RIICHIRO, OKUYAMA KOSUKE
Format Patent
LanguageEnglish
Japanese
Published 13.12.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:To provide a nonvolatile memory cell and a nonvolatile semiconductor storage device which can be integrated and minimized.SOLUTION: In a nonvolatile semiconductor storage device, a three-dimensional structure for a memory cell C in which a memory transistor MT, a drain side selection transistor DT and a source side selection transistor ST are serially connected to each other can be realized. By making the memory cell C the three-dimensional structure, the memory cell C can be integrated and miniaturized without restrictions due to two-dimensional scaling.SELECTED DRAWING: Figure 2 【課題】集積化及び小型化を図ることができる不揮発性メモリセル及び不揮発性半導体記憶装置を提供する。【解決手段】不揮発性半導体記憶装置では、メモリトランジスタＭＴ、ドレイン側選択トランジスタＤＴ及びソース側選択トランジスタＳＴを直列接続させたメモリセルＣについて３次元構造を実現することができ、当該メモリセルＣを３次元構造としたことで、２次元的なスケーリングによる制約を受けることなく、メモリセルＣの集積化及び小型化を図ることができる。【選択図】図２
Bibliography:Application Number: JP20220088177