MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE

To provide a transistor having smaller variation, higher reliability, and stable electric characteristic despite of having a minute structure, and increase the performance and reliability also in a semiconductor device including the transistor.SOLUTION: An insulator is formed on a substrate, an open...

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Bibliographic Details
Main Author KAKEHATA TETSUYA
Format Patent
LanguageEnglish
Japanese
Published 01.12.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC HEATING
ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:To provide a transistor having smaller variation, higher reliability, and stable electric characteristic despite of having a minute structure, and increase the performance and reliability also in a semiconductor device including the transistor.SOLUTION: An insulator is formed on a substrate, an opening is formed in the insulator, and an oxide semiconductor is formed in the opening. After that, a part of the insulator is removed to expose a side surface of the oxide semiconductor.SELECTED DRAWING: Figure 11 【課題】微細な構造であっても、ばらつきの少ない、信頼性が高く、安定した電気特性を有するトランジスタを提供する。また、該トランジスタを含む半導体装置においても、高性能化、高信頼性化を達成する。【解決手段】基板上に絶縁体を形成し、絶縁体に開口部を形成し、開口部内に酸化物半導体を形成した後、絶縁体の一部を除去し、酸化物半導体の側面を露出する。【選択図】図１１
Bibliography:Application Number: JP20230152059