MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE
To provide a transistor having smaller variation, higher reliability, and stable electric characteristic despite of having a minute structure, and increase the performance and reliability also in a semiconductor device including the transistor.SOLUTION: An insulator is formed on a substrate, an open...
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Main Author | |
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Format | Patent |
Language | English Japanese |
Published |
01.12.2023
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Subjects | |
Online Access | Get full text |
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Summary: | To provide a transistor having smaller variation, higher reliability, and stable electric characteristic despite of having a minute structure, and increase the performance and reliability also in a semiconductor device including the transistor.SOLUTION: An insulator is formed on a substrate, an opening is formed in the insulator, and an oxide semiconductor is formed in the opening. After that, a part of the insulator is removed to expose a side surface of the oxide semiconductor.SELECTED DRAWING: Figure 11
【課題】微細な構造であっても、ばらつきの少ない、信頼性が高く、安定した電気特性を有するトランジスタを提供する。また、該トランジスタを含む半導体装置においても、高性能化、高信頼性化を達成する。【解決手段】基板上に絶縁体を形成し、絶縁体に開口部を形成し、開口部内に酸化物半導体を形成した後、絶縁体の一部を除去し、酸化物半導体の側面を露出する。【選択図】図11 |
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Bibliography: | Application Number: JP20230152059 |