RADIATION-RESISTANT SEMICONDUCTOR DEVICE, CONTROL METHOD FOR RADIATION-RESISTANT SEMICONDUCTOR DEVICE, AND SENSOR SYSTEM FOR NUCLEAR POWER PLANT

• Main Authors: KUWANA RYO, MASUNAGA MASAHIRO, NORIMATSU TAKAYASU, NOMOTO SHINJI
• Format: Patent
• Language: English; Japanese
• Published: 30.11.2023
• Subjects: BASIC ELECTRIC ELEMENTS; BASIC ELECTRONIC CIRCUITRY; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; NUCLEAR ENGINEERING; NUCLEAR PHYSICS; NUCLEAR POWER PLANT; PHYSICS; PULSE TECHNIQUE; SEMICONDUCTOR DEVICES

To provide a radiation-resistant semiconductor device equipped with a multiplexer that is resistant to radiation and has a high manufacturing yield.SOLUTION: A radiation-resistant semiconductor device includes a multiplexer 101 with a large-scale configuration in which a plurality of unit multiplexers (201A to 201D, 201S) configured using silicon carbide are connected in a predetermined manner. The multiplexer in the large-scale configuration includes a plurality of input signal lines (S00 to S09, S0A to S0F) connected to a part of the plurality of unit multiplexers, and an output signal line (D) output from one of the plurality of unit multiplexers. The unit multiplexer (201S) to which the output signal line is connected and the unit multiplexers (201A to 201D) to which the input signal line is connected are controlled by different control signals ([A00, A01],[ A02, A03]), and each of the plurality of unit multiplexers is composed of an independent chip piece.SELECTED DRAWING: Figure 1 【課題】耐放射線に強く、製造歩留りの高いマルチプレクサを搭載した耐放射線半導体装置を提供する。【解決手段】炭化ケイ素を用いて構成される複数の単位マルチプレクサ（２０１Ａ～２０１Ｄ，２０１Ｓ）が所定に接続された大規模構成のマルチプレクサ１０１を備え、大規模構成の前記マルチプレクサは、複数の前記単位マルチプレクサの一部に接続される複数の入力信号線（Ｓ００～Ｓ０９，Ｓ０Ａ～Ｓ０Ｆ）と、複数の前記単位マルチプレクサの内の一つから出力される出力信号線（Ｄ）と、を備え、前記出力信号線が接続される単位マルチプレクサ（２０１Ｓ）と前記入力信号線が接続される単位マルチプレクサ（２０１Ａ～２０１Ｄ）とは異なる制御信号（［Ａ００，Ａ０１］，［Ａ０２，Ａ０３］）によって制御され、複数の前記単位マルチプレクサは、それぞれが独立したチップ片で構成されている。【選択図】図１