SUBSTRATE PROCESSING DEVICE AND CONTROL METHOD OF THE SAME

• Main Authors: OKAMURA SATOSHI, GOSHI GENTARO, BIWA SATOSHI
• Format: Patent
• Language: English; Japanese
• Published: 24.11.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a substrate processing device which can improve cleanliness of a wafer after dry processing using processing fluid in a supercritical state and a control method of the same.SOLUTION: A substrate processing device comprises: a processing container which has a processing space that can store a substrate in such a state that the surface is wetted with liquid; a processing fluid supply part which has a supply line that supplies processing fluid in a supercritical state toward the liquid to the processing space; a first exhaust line which is connected to a first exhaust source and exhausts air from the processing space under the first exhaust pressure; a second exhaust line which is connected to a second exhaust source different from the first exhaust source, connected to the supply line on the upstream side of the processing container and exhausts air from the supply line under the second exhaust pressure; and a control part which controls the second exhaust pressure. The control part makes the second exhaust pressure stronger than the first exhaust pressure in a period in which there is no substrate in the processing container and the processing fluid supply part stops supply of the processing fluid to the processing space.SELECTED DRAWING: Figure 13 【課題】超臨界状態の処理流体を用いた乾燥処理後のウエハの清浄度を向上することができる基板処理装置及びその制御方法を提供する。【解決手段】基板処理装置は、液体により表面が濡れた状態の基板を収容可能な処理空間を有する処理容器と、前記液体に向けて超臨界状態の処理流体を前記処理空間に供給する供給ラインを有する処理流体供給部と、第１の排気源に接続され、前記処理空間を第１の排気圧で排気する第１の排気ラインと、前記第１の排気源とは異なる第２の排気源に接続され、前記処理容器の上流側で前記供給ラインに接続され、前記供給ラインを第２の排気圧で排気する第２の排気ラインと、前記第２の排気圧を制御する制御部と、を有し、前記制御部は、前記処理容器内に前記基板がなく、前記処理流体供給部が前記処理流体を前記処理空間への供給を停止している期間に、前記第２の排気圧を前記第１の排気圧より強くする。【選択図】図１３