SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

• Main Authors: TAKASU HISASHI, YAMAGISHI TETSUTO, KATO YASUSHI, KODAMA YUKIO, IWADE TOMOO
• Format: Patent
• Language: English; Japanese
• Published: 24.11.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a semiconductor device in which a stress working on a bonding wire can be reduced.SOLUTION: A semiconductor device comprises: a semiconductor element 40 in which a main electrode and a pad 44 are arranged on one surface of a semiconductor substrate 41; a bonding wire that is connected to the pad 44; and a sealing resin body. The semiconductor substrate 41 has an active region 45 and an outer peripheral region 46. The outer peripheral region 46 has a high temperature region 461 and a low temperature region 462 in which temperature is lower than the high temperature region 461 at element driving time. The pad 44 is arranged on the low temperature region 462.SELECTED DRAWING: Figure 5 【課題】ボンディングワイヤに作用する応力を低減できる半導体装置を提供すること。【解決手段】半導体装置は、半導体基板４１の一面上に主電極およびパッド４４が配置された半導体素子４０と、パッド４４に接続されたボンディングワイヤと、封止樹脂体を備える。半導体基板４１は、アクティブ領域４５および外周領域４６を有する。外周領域４６は、高温領域４６１と、素子駆動時において高温領域４６１よりも温度が低い低温領域４６２を有する。パッド４４は、低温領域４６２上に配置されている。【選択図】図５