HEAT TREATMENT DEVICE, HEAT TREATMENT METHOD, AND COMPUTER STORAGE MEDIUM

• Main Authors: TANAKA KOICHIRO, OTSUKA YUKINOBU, TERASHITA YUICHI
• Format: Patent
• Language: English; Japanese
• Published: 24.11.2023
• Subjects: ELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY

To prevent the occurrence of a defect in a substrate due to a substance generated in a treatment space during heating without impairing substrate in-plane uniformity of a coating film after heat treatment.SOLUTION: A heat treatment device heating a substrate formed with a coating film comprises: a treatment container that forms a treatment space for accommodating the substrate; a heating plate having a mounting surface on which the substrate accommodated in the treatment space is mounted, and a heating unit that heats the substrate; an adjustment mechanism that adjusts the height of the substrate with respect to the heating plate; an exhaust unit that exhausts air from the treatment space; and a control unit. The control unit performs control to execute: (A) a step of adjusting the height of the substrate with respect to the heating plate to a predetermined height separated from the heating plate by a predetermined distance and starting heating treatment on the substrate; and (B) a step of, when the heating treatment advances to a predetermined degree, decreasing the height of the substrate with respect to the heating plate compared to the predetermined height, mounting the substrate on the heating plate or bringing the substrate into proximity to the heating plate, and switching the exhaust of air from the treatment space from OFF to ON.SELECTED DRAWING: Figure 2 【課題】加熱処理後の塗布膜の基板面内均一性を損なわずに、加熱中に処理空間内に生じた物質に起因する欠陥が基板に発生するのを抑制する。【解決手段】塗布膜が形成された基板を加熱する加熱処理装置であって、基板を収容する処理空間を形成する処理容器と、前記処理空間に収容された基板が載置される載置面と、基板を加熱する加熱部と、を有する熱板と、前記熱板に対する基板の高さを調整する調整機構と、前記処理空間を排気する排気部と、制御部と、を備え、前記制御部は、（Ａ）前記熱板に対する基板の高さを前記熱板から所定の距離離れる所定の高さとし基板の加熱処理を開始する工程と、（Ｂ）前記加熱処理が所定の進行度合いになった際に、前記熱板に対する基板の高さを前記所定の高さより低くし、基板を前記熱板に載置した状態または近接した状態にすると共に、前記処理空間の排気をＯＦＦからＯＮに切り替える工程と、を実行するよう、制御を行う。【選択図】図２