POLYMERIC MATERIAL, SELF-ASSEMBLED MONOLAYER, SELF-ASSEMBLED MONOLAYER PRODUCTION METHOD, PATTERN, AND PATTERN FORMATION METHOD
To provide a polymeric material capable of forming a self-assembled monolayer which has a small half-pitch (hp) of the formed pattern, uniformity and film strength, and is excellent in etch resistance in dry etching.SOLUTION: The polymeric material contains a multi-block copolymer formed by linking...
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Main Authors | , , , , |
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Format | Patent |
Language | English Japanese |
Published |
22.11.2023
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Abstract | To provide a polymeric material capable of forming a self-assembled monolayer which has a small half-pitch (hp) of the formed pattern, uniformity and film strength, and is excellent in etch resistance in dry etching.SOLUTION: The polymeric material contains a multi-block copolymer formed by linking first and second polymerization blocks. The first polymerization block is a random copolymer comprising: a styrene unit having a specific silyl group at the para position and having a hydrogen atom or C1-3 alkyl group at the α-position; and a styrene unit having a 3-butenyl group at the para position and having a hydrogen atom or C1-3 alkyl group at the α-position. The second polymerization block comprises a styrene unit having a hydroxy group at the para position and having a hydrogen atom or C1-3 alkyl group at the α-position. In the first polymerization block, the content of the styrene unit having a 3-butenyl group at the para position and having a hydrogen atom or C1-3 alkyl group at the α-position is 1-49 mol% based on the total amount of the first polymerization block.SELECTED DRAWING: None
【課題】形成するパターンのハーフピッチ(hp)が小さく、均一であり、膜強度を有し、かつ、ドライエッチングの際におけるエッチング耐性に優れる自己組織化膜を形成することができる高分子材料を提供する。【解決手段】パラ位に特定のシリル基を有し、α位が水素原子または炭素数1~3のアルキル基であるスチレン単位と、パラ位に3-ブテニル基を有し、α位が水素原子または炭素数1~3のアルキル基であるスチレン単位とを含むランダム共重合体である第1重合ブロックと、パラ位にヒドロキシ基を有し、α位が水素原子または炭素数1~3のアルキル基であるスチレン単位を含む第2重合ブロックと、が連結されてなるマルチブロック共重合体を含有し、上記第1重合ブロックは、前記第1重合ブロック全体に対して、パラ位に3-ブテニル基を有し、α位が水素原子または炭素数1~3のアルキル基であるスチレン単位を1~49mol%含む高分子材料。【選択図】なし |
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AbstractList | To provide a polymeric material capable of forming a self-assembled monolayer which has a small half-pitch (hp) of the formed pattern, uniformity and film strength, and is excellent in etch resistance in dry etching.SOLUTION: The polymeric material contains a multi-block copolymer formed by linking first and second polymerization blocks. The first polymerization block is a random copolymer comprising: a styrene unit having a specific silyl group at the para position and having a hydrogen atom or C1-3 alkyl group at the α-position; and a styrene unit having a 3-butenyl group at the para position and having a hydrogen atom or C1-3 alkyl group at the α-position. The second polymerization block comprises a styrene unit having a hydroxy group at the para position and having a hydrogen atom or C1-3 alkyl group at the α-position. In the first polymerization block, the content of the styrene unit having a 3-butenyl group at the para position and having a hydrogen atom or C1-3 alkyl group at the α-position is 1-49 mol% based on the total amount of the first polymerization block.SELECTED DRAWING: None
【課題】形成するパターンのハーフピッチ(hp)が小さく、均一であり、膜強度を有し、かつ、ドライエッチングの際におけるエッチング耐性に優れる自己組織化膜を形成することができる高分子材料を提供する。【解決手段】パラ位に特定のシリル基を有し、α位が水素原子または炭素数1~3のアルキル基であるスチレン単位と、パラ位に3-ブテニル基を有し、α位が水素原子または炭素数1~3のアルキル基であるスチレン単位とを含むランダム共重合体である第1重合ブロックと、パラ位にヒドロキシ基を有し、α位が水素原子または炭素数1~3のアルキル基であるスチレン単位を含む第2重合ブロックと、が連結されてなるマルチブロック共重合体を含有し、上記第1重合ブロックは、前記第1重合ブロック全体に対して、パラ位に3-ブテニル基を有し、α位が水素原子または炭素数1~3のアルキル基であるスチレン単位を1~49mol%含む高分子材料。【選択図】なし |
Author | SAITO SHUNSUKE FUKUNAGA NORIYA HIRAHARA KAZUHIRO SAWABE TOMOMI MIYAJIMA TORU |
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DocumentTitleAlternate | 高分子材料、自己組織化膜、自己組織化膜の製造方法、パターン及びパターンの形成方法 |
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Snippet | To provide a polymeric material capable of forming a self-assembled monolayer which has a small half-pitch (hp) of the formed pattern, uniformity and film... |
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Title | POLYMERIC MATERIAL, SELF-ASSEMBLED MONOLAYER, SELF-ASSEMBLED MONOLAYER PRODUCTION METHOD, PATTERN, AND PATTERN FORMATION METHOD |
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