POLYMERIC MATERIAL, SELF-ASSEMBLED MONOLAYER, SELF-ASSEMBLED MONOLAYER PRODUCTION METHOD, PATTERN, AND PATTERN FORMATION METHOD

• Main Authors: MIYAJIMA TORU, SAITO SHUNSUKE, FUKUNAGA NORIYA, SAWABE TOMOMI, HIRAHARA KAZUHIRO
• Format: Patent
• Language: English; Japanese
• Published: 22.11.2023
• Subjects: CHEMISTRY; COMPOSITIONS BASED THEREON; MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS; METALLURGY; ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP

To provide a polymeric material capable of forming a self-assembled monolayer which has a small half-pitch (hp) of the formed pattern, uniformity and film strength, and is excellent in etch resistance in dry etching.SOLUTION: The polymeric material contains a multi-block copolymer formed by linking first and second polymerization blocks. The first polymerization block is a random copolymer comprising: a styrene unit having a specific silyl group at the para position and having a hydrogen atom or C1-3 alkyl group at the α-position; and a styrene unit having a 3-butenyl group at the para position and having a hydrogen atom or C1-3 alkyl group at the α-position. The second polymerization block comprises a styrene unit having a hydroxy group at the para position and having a hydrogen atom or C1-3 alkyl group at the α-position. In the first polymerization block, the content of the styrene unit having a 3-butenyl group at the para position and having a hydrogen atom or C1-3 alkyl group at the α-position is 1-49 mol% based on the total amount of the first polymerization block.SELECTED DRAWING: None 【課題】形成するパターンのハーフピッチ（ｈｐ）が小さく、均一であり、膜強度を有し、かつ、ドライエッチングの際におけるエッチング耐性に優れる自己組織化膜を形成することができる高分子材料を提供する。【解決手段】パラ位に特定のシリル基を有し、α位が水素原子または炭素数１～３のアルキル基であるスチレン単位と、パラ位に３－ブテニル基を有し、α位が水素原子または炭素数１～３のアルキル基であるスチレン単位とを含むランダム共重合体である第１重合ブロックと、パラ位にヒドロキシ基を有し、α位が水素原子または炭素数１～３のアルキル基であるスチレン単位を含む第２重合ブロックと、が連結されてなるマルチブロック共重合体を含有し、上記第１重合ブロックは、前記第１重合ブロック全体に対して、パラ位に３－ブテニル基を有し、α位が水素原子または炭素数１～３のアルキル基であるスチレン単位を１～４９ｍｏｌ％含む高分子材料。【選択図】なし