SILICON CARBIDE EPITAXIAL WAFER

• Main Authors: KOJIMA KAZUSATO, MASUMOTO KEIKO, KATO TOMOHISA, SEGAWA SATOSHI, ONO TOSHIYUKI
• Format: Patent
• Language: English; Japanese
• Published: 17.11.2023
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

To provide a silicon carbide epitaxial wafer having a warp amount smaller than that of a conventional silicon carbide epitaxial wafer.SOLUTION: A silicon carbide epitaxial wafer 10 includes: a silicon carbide substrate 1; and a silicon carbide layer 2 provided on a first main surface of the silicon carbide substrate 1 and having a thickness of 100 μm. The warp amounts of the silicon carbide epitaxial wafer is -20 μm or more and 20 μm or less, and a second main surface facing the first main surface of the silicon carbide substrate has a surface roughness (Ra) of 20 nm or more.SELECTED DRAWING: Figure 4 【課題】従来の炭化珪素エピタキシャルウェハよりも反り量が小さい炭化珪素エピタキシャルウェハを提供することである。【解決手段】本発明の炭化珪素エピタキシャルウェハ１０は、炭化珪素基板１と、炭化珪素基板１の第１主面に設けられ１００μｍ以上の膜厚を有する炭化珪素層２と、を備える炭化珪素エピタキシャルウェハであって、炭化珪素エピタキシャルウェハの反り量が－２０μｍ以上、２０μｍ以下であり、炭化珪素基板の第１主面と対向する第２主面の表面粗さ（Ｒａ）が２０ｎｍ以上である。【選択図】図４