SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING DEVICE

• Main Authors: TAKEI JUNICHI, TAKAHASHI NAOKI, SHINADA MASATO
• Format: Patent
• Language: English; Japanese
• Published: 09.11.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To prevent abnormal discharging at an electrode part connected to a stage inside a vacuum container.SOLUTION: A substrate processing method to be performed in a substrate processing device including a vacuum container, a stage disposed in the vacuum container and having a heater, a gas supply part that supplies gas into the vacuum container, an exhaust device that exhausts gas in the vacuum container, and an electrode part that is connected to the stage, applies voltage to the heater, and is disposed in the vacuum container is to perform a discharging countermeasure process including the steps of stopping the application of voltage to the heater while the pressure in the vacuum container is in a discharge pressure range, in which discharging occurs in the vacuum container, by referring to the discharge pressure range on the basis of Paschen's law, and starting the application of voltage to the heater again when the pressure in the vacuum container is out of the discharge pressure range.SELECTED DRAWING: Figure 4 【課題】真空容器内のステージに接続された電極部における異常放電を防止する。【解決手段】真空容器と、前記真空容器内に配置され、ヒータを有するステージと、前記真空容器内にガスを供給するガス供給部と、前記真空容器内のガスを排気する排気装置と、前記ステージに接続され、前記ヒータに電圧を印加する電極部であり、前記真空容器内に設置される電極部と、を有する基板処理装置において実行される基板処理方法であって、パッシェン法則に基づき前記真空容器内に放電が発生する放電圧力範囲を参照して、前記真空容器内の圧力が前記放電圧力範囲内の間、前記ヒータへの印加電圧をオフにするステップと、前記真空容器内の圧力が前記放電圧力範囲を外れたとき、再度前記ヒータへの印加電圧をオンにするステップと、を含む放電対策処理を実行する基板処理方法が提供される。【選択図】図４