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To provide a compound which is cured even under film deposition conditions in an inert gas and can form an organic underlayer film not only excellent in heat resistance and properties of filling and planarizing a pattern formed on a substrate but also good in dry etching resistance during substrate...

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Main Authors WATANABE TAKESHI, DANIEL PAUL SANDERS, SAWAMURA TAKASHI, OGIWARA TSUTOMU, ARAIDA KEISUKE, GREGORY BREYTA, RUDY J WOJTECKI, NAGAI YOKO, ALEXANDER EDWARD HESS, TACHIBANA SEIICHIRO
Format Patent
LanguageEnglish
Japanese
Published 08.11.2023
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Summary:To provide a compound which is cured even under film deposition conditions in an inert gas and can form an organic underlayer film not only excellent in heat resistance and properties of filling and planarizing a pattern formed on a substrate but also good in dry etching resistance during substrate processing.SOLUTION: The compound is represented by the following formula (1-1) (where AR1 and AR2 each represent an aromatic ring or an aromatic ring containing one or more of a nitrogen atom and a sulfur atom; two AR1's, AR1 and AR2, or two AR2's may be linked; AR3 represents a benzene ring, a naphthalene ring, a thiophene ring, a pyridine ring or a diazine ring; A represents an organic group; B represents an anionic leaving group; Y represents a divalent organic group; p is 1 or 2; q is 1 or 2; r is 0 or 1; s is 2-4; when s=2, Z represents a single bond, a divalent atom or a divalent organic group; and when s=3 or 4, Z represents a trivalent or tetravalent atom or organic group).SELECTED DRAWING: Figure 1 【課題】不活性ガス中での成膜条件でも硬化し、耐熱性や、基板上に形成されたパターンの埋め込みや平坦化特性に優れるだけでなく、基板加工時のドライエッチング耐性も良好な有機下層膜を形成できる化合物の提供。【解決手段】下式(1-1)で示される化合物。TIFF2023162191000071.tif18103(式中、AR1、AR2は芳香環又は窒素原子、硫黄原子のうち1個以上を含む芳香環を示し、2つのAR1、AR1とAR2、2つのAR2が連結してもよい。AR3はベンゼン環、ナフタレン環、チオフェン環、ピリジン環、又はジアジン環である。Aは有機基、Bはアニオン性脱離基、Yは2価の有機基、pは1または2、qは1または2、rは0または1、sは2~4である。s=2のとき、Zは単結合、2価の原子、又は2価の有機基であり、s=3または4のとき、Zは3価または4価の、原子または有機基である。)【選択図】図1
Bibliography:Application Number: JP20230125571