WAFER MOUNTING TABLE
To increase plasma density in a region right above a ceramic base material.SOLUTION: A wafer mounting table 10 comprises: a ceramic base material 20 which has a wafer mounting surface 22a on its upper surface and is internally provided with an electrode 26; a conductive base material 30, provided on...
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Main Authors | , |
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Format | Patent |
Language | English Japanese |
Published |
07.11.2023
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Subjects | |
Online Access | Get full text |
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Summary: | To increase plasma density in a region right above a ceramic base material.SOLUTION: A wafer mounting table 10 comprises: a ceramic base material 20 which has a wafer mounting surface 22a on its upper surface and is internally provided with an electrode 26; a conductive base material 30, provided on a lower surface side of the ceramic base material 20, which is also used as a plasma generating electrode and has the diameter equal to that of the ceramic base material 20; a support base material 40, provided on a lower surface side of the conductive base material 30, which has a diameter greater than that of the conductive base material 30 and is electrically insulated from the conductive base material 30; and a fitting flange 42 which is a portion, of the support base material 40, protruding further outward in the radial direction than the conductive base material 30.SELECTED DRAWING: Figure 1
【課題】セラミック基材の直上領域のプラズマ密度を高くする。【解決手段】ウエハ載置台10は、上面にウエハ載置面22aを有し、電極26を内蔵するセラミック基材20と、セラミック基材20の下面側に設けられ、プラズマ発生電極を兼用し、セラミック基材20と同径の導電性基材30と、導電性基材30の下面側に設けられ、導電性基材30よりも径が大きく、導電性基材30と電気的に絶縁された支持基材40と、支持基材40のうち導電性基材30よりも半径方向外側にはみ出した部分である取付用フランジ42と、を備える。【選択図】図1 |
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Bibliography: | Application Number: JP20220071356 |