DISPLAY DEVICE

• Main Authors: SASAKI TOSHINARI, OHARA HIROKI
• Format: Patent
• Language: English; Japanese
• Published: 02.11.2023
• Subjects: ADVERTISING; BASIC ELECTRIC ELEMENTS; CRYPTOGRAPHY; DISPLAY; DISPLAYING; EDUCATION; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; LABELS OR NAME-PLATES; PHYSICS; SEALS; SEMICONDUCTOR DEVICES; SIGNS

To provide a semiconductor device including a semiconductor element which has favorable characteristics.SOLUTION: A manufacturing method of the present invention includes the steps of: forming a first conductive layer which functions as a gate electrode over a substrate; forming a first insulating layer to cover the first conductive layer; forming a semiconductor layer over the first insulating layer so that part of the semiconductor layer overlaps with the first conductive layer; forming a second conductive layer to be electrically connected to the semiconductor layer; forming a second insulating layer to cover the semiconductor layer and the second conductive layer; forming a third conductive layer to be electrically connected to the second conductive layer; performing first heat treatment after forming the semiconductor layer and before forming the second insulating layer; and performing second heat treatment after forming the second insulating layer.SELECTED DRAWING: Figure 2 【課題】特性の良い半導体素子を有する半導体装置を提供することを目的の一とする。【解決手段】基板上に、ゲート電極として機能する第１の導電層を形成する工程と、第１の導電層を覆うように第１の絶縁層を形成する工程と、第１の導電層と一部が重畳するように、第１の絶縁層上に半導体層を形成する工程と、半導体層と電気的に接続されるように第２の導電層を形成する工程と、半導体層および第２の導電層を覆う第２の絶縁層を形成する工程と、第２の導電層と電気的に接続される第３の導電層を形成する工程と、半導体層を形成する工程の後、第２の絶縁層を形成する工程の前の第１の熱処理工程と、第２の絶縁層を形成する工程の後の第２の熱処理工程と、を有する。【選択図】図２