COMPOSITE PAD FOR CHEMICAL MECHANICAL POLISHING

To provide chemical mechanical polishing and a pad useful for the chemical mechanical polishing.SOLUTION: A chemical mechanical polishing pad comprises a substantially non-porous polishing layer, the polishing layer comprising a polymer matrix and agglomerates of polymer particles embedded in the po...

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Bibliographic Details
Main Authors LIU ZHAN, CHIOU NAN-RONG, MICHAEL E MILLS
Format Patent
LanguageEnglish
Japanese
Published 02.11.2023
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Summary:To provide chemical mechanical polishing and a pad useful for the chemical mechanical polishing.SOLUTION: A chemical mechanical polishing pad comprises a substantially non-porous polishing layer, the polishing layer comprising a polymer matrix and agglomerates of polymer particles embedded in the polymer matrix, where the polymer particles are present in an amount of 5 to 35 wt.% based on the weight of the polishing layer, the agglomerates have size greater than 1 μm, and the polymer particles have a tensile modulus higher than a tensile modulus of the polymer matrix. The polishing layer is viscoelastic and has a GEL greater than 1000 Pa-1. Polishing a metal/insulator composite with such a pad can reduce the amount of dishing of a metal feature.SELECTED DRAWING: None 【課題】化学機械研磨及び化学機械研磨に有用なパッドを提供する。【解決手段】実質的に無孔性の研磨層を含む化学機械研磨パッドであって、該研磨層が、ポリマーマトリックスと、該ポリマーマトリックス中に埋め込まれたポリマー粒子の凝集体(agglomerates)とを含み、該ポリマー粒子が、該研磨層の重量を基準にして5~35重量%の量で存在し、該凝集体が1μmよりも大きいサイズを有し、該ポリマー粒子が、該ポリマーマトリックスの引張弾性率よりも高い引張弾性率を有する、化学機械研磨パッド。研磨層は粘弾性であり、1000Pa-1より大きいGELを有する。金属/絶縁体の複合体をそのようなパッドで研磨すると、金属形体のディッシングの量を低下させることができる。【選択図】なし
Bibliography:Application Number: JP20230051711