AMPLIFICATION DEVICE AND APPARATUS

• Main Authors: HARA ISAO, KUWANA RYO, MASUNAGA MASAHIRO
• Format: Patent
• Language: English; Japanese
• Published: 02.11.2023
• Subjects: AMPLIFIERS; BASIC ELECTRIC ELEMENTS; BASIC ELECTRONIC CIRCUITRY; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide an amplification device which can reduce noise while increasing the resistance to radiation.SOLUTION: A plurality of MOS transistors receive an input of input signals included in differential signals in a differential amplification unit 200 of an amplification device 100 and are formed of SiC-nMOS 1 and 2 as n-type MOS transistors in which the channel is made of a wide-band semiconductor material with a larger band gap than the band gap of Si. Also, the drain currents of the SiC-nMOS 1 and 2 are lower than the reference value of a drain current at the intersection of the function showing the relation between the noise density and the drain current of the SiC-nMOS 1 and 2 and the function showing the relation between the noise density and the drain current of the SiC-pMOS 1 as a p-type MOS transistor having a channel made of the same wide-band semiconductor material.SELECTED DRAWING: Figure 4 【課題】耐放射線性を向上させつつ、ノイズの低減化を図ることが可能な増幅装置を提供する。【解決手段】増幅装置１００の差動増幅部２００における差動信号に含まれる各入力信号が入力される複数のＭＯＳトランジスタは、チャネルをＳｉよりもバンドギャップが大きいワイドバンド半導体材料で形成したｎ型ＭＯＳトランジスタであるＳｉＣ－ｎＭＯＳ１及び２で構成される。また、ＳｉＣ－ｎＭＯＳ１及び２のドレイン電流は、ＳｉＣ－ｎＭＯＳ１及び２のノイズ密度とドレイン電流との関係を表す関数とチャネルを同じワイドバンド半導体材料で形成したｐ型ＭＯＳトランジスタであるＳｉＣ－ｐＭＯＳ１のノイズ密度とドレイン電流との関係を表す関数との交点におけるドレイン電流の値である基準値よりも低い。【選択図】図４