SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS

To control a pattern shape formed on a substrate by etching.SOLUTION: A substrate processing method includes a step of providing a substrate and a first step. In the step of providing the substrate, a first film and a second film formed on the first film and having a pattern formed on the first film...

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Bibliographic Details
Main Authors IIJIMA YUKI, HISAMATSU TORU, KUMAGAI YOSHIE
Format Patent
LanguageEnglish
Japanese
Published 31.10.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:To control a pattern shape formed on a substrate by etching.SOLUTION: A substrate processing method includes a step of providing a substrate and a first step. In the step of providing the substrate, a first film and a second film formed on the first film and having a pattern formed on the first film is provided. In the first step, a first processing gas is turned into plasma and the first film is etched at the same time as the sputtering of the second film, and a protective film is formed on the side wall of the first film with a product generated by the sputtering.SELECTED DRAWING: Figure 1 【課題】エッチングにより基板に形成されるパターン形状を制御する。【解決手段】基板処理方法は、基板を提供する工程と、第１工程と、を含む。基板を提供する工程において、第１膜と、当該第１膜上に形成され、かつ、パターンが形成された第２膜と、を有する基板を提供する。第１工程において、第１の処理ガスをプラズマ化して第２膜のスパッタリングと同時に第１膜をエッチングしつつ、第１膜の側壁に前記スパッタリングにより発生した生成物で保護膜を形成する。【選択図】図１
Bibliography:Application Number: JP20230136150